MULTILAYER FILM STRUCTURE AND FORMATION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a new multilayer film structure and a formation method thereof.

SOLUTION: A formation method of a multilayer film structure for semiconductor elements includes: a semiconductor layer formation step of forming a semiconductor layer composed of a germanium tin mixed crystal on a substrate containing silicon; a surface protection layer formation step of forming a surface protection layer on the semiconductor layer; a semiconductor strain application layer formation step of forming a semiconductor strain application layer composed of a silicon germanium tin mixed crystal by advancing solid-phase reaction with a substrate containing the germanium tin mixed crystal and the silicon by performing heat treatment for the semiconductor layer; a removal step of removing the surface protection layer; and a lamination step of laminating a strain semiconductor layer above the semiconductor strain application layer after the removal step.

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