| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which eases stress applied to a contact region between an insulation layer and side surfaces of a base metal layer due to a temperature load caused when a substrate is mounted and prevents the occurrence of cracks of the insulation layer which is caused by the stress. <P>SOLUTION: A semiconductor device 109 is formed by laminating an insulation layer 102, a base metal layer 103, and a land part 104 for providing a metal terminal on one surface 101a of a semiconductor substrate 101 in this order. The land part 104 has a joining region joining with the base metal layer 103 at a center part of a surface facing the insulation layer 102 and a non joining region excluding the joining region on the surface facing the insulation layer 102. The base metal layer 103 has side surfaces inclining outwardly from the land part 104 side to the insulation layer 102 side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
