| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the occurrence of leakage current due to a crystal defect, in a semiconductor device having a plurality of second-conductivity-type regions that are selectively formed in a surface portion of a first-conductivity-type semiconductor layer. <P>SOLUTION: A MOSFET is formed using a silicon carbide substrate 10 in which an n-type silicon carbide drift layer 20 is formed on its primary surface. In a top-surface portion of the silicon carbide drift layer 20, a plurality of p-type first well regions 30 are selectively formed. In the region of the silicon carbide drift layer 20 where a basal plane defect exists, an integral p-type second well region 31 is formed in the top-surface portion of the silicon carbide drift layer 20 so as to overlap the first well regions 30. <P>COPYRIGHT: (C)2013,JPO&INPIT |
