发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING CONTACT PLUG
摘要 <P>PROBLEM TO BE SOLVED: To favorably maintain contact resistance between an electrode body and a conducting electrode of a semiconductor circuit of a semiconductor device in the configuration of the circuit. <P>SOLUTION: There is provided a semiconductor device comprising a circuit including: a silicide which becomes an electrode body of the semiconductor circuit; and a contact plug which is electrically connected to the silicide and becomes a conducting electrode formed in a space to which a side surface of the silicide is exposed after a stopper layer is removed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012244048(A) 申请公布日期 2012.12.10
申请号 JP20110114717 申请日期 2011.05.23
申请人 ELPIDA MEMORY INC 发明人 KONO AKIRA
分类号 H01L21/768;H01L21/8242;H01L23/522;H01L27/10;H01L27/108 主分类号 H01L21/768
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