| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a stacked photoelectric conversion device which is configured by stacking an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit, and surpasses a conventional photoelectric conversion device in both aspects of performance and productivity. <P>SOLUTION: The reverse conductivity type layer of an amorphous silicon-based photoelectric conversion unit 3 and/or the one conductivity type layer of a crystalline silicon-based photoelectric conversion unit 4 consists of a silicon oxide, and the thickness of the reverse conductivity type layer of the amorphous silicon-based photoelectric conversion unit and/or the one conductivity type layer of the crystalline silicon-based photoelectric conversion unit is set in the range of 140-240 nm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
