| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows reduction in on-resistance. <P>SOLUTION: A MOSFET 100 comprises: a silicon carbide substrate 1; a buffer layer 2 that is composed of silicon carbide and is formed on the silicon carbide substrate 1; a drift layer 3 that is formed on the buffer layer 2 and is composed of silicon carbide whose conductivity type is an n type; a p-type body region 4 that is formed in the drift layer 3 so as to include a primary surface of the drift layer 3 on the opposite side of the buffer layer 2 and whose conductivity type is a p type; a source contact electrode 92 that is formed on the p-type body region 4; and a drain electrode 96 that is formed on a primary surface of the silicon carbide substrate 1 on the opposite side of the buffer layer 2. In the region of the drift layer 3 sandwiched between the buffer layer 2 and the body region 4, a current path region 32, which has a higher impurity region than the other regions in the drift layer 3, is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
