发明名称 Substrate processing system and substrate processing method using the same
摘要 PURPOSE: A substrate processing system and a substrate processing method using the same are provided to efficiently remove a silicon oxide film, an etching by-product, and a fume from a substrate by dry-cleaning process and wet-cleaning. CONSTITUTION: A wet cleaning module(300) cleans a substrate surface by supplying a cleaning solution to a substrate and dries a cleaned substrate. A dry cleaning module(600) etches a silicon oxide film formed on the substrate by spraying cleaning gas including HF gas to the substrate. A vacuum transfer module(500) is connected to the dry cleaning module and transfers the substrate to the dry cleaning module in a vacuum condition.
申请公布号 KR20120133341(A) 申请公布日期 2012.12.10
申请号 KR20110051974 申请日期 2011.05.31
申请人 发明人
分类号 H01L21/302 主分类号 H01L21/302
代理机构 代理人
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