| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of improving light extraction efficiency with high reproductive rate. <P>SOLUTION: There is provided a semiconductor light-emitting device 110 comprising a first semiconductor layer 10, a light-emitting layer 30, a second semiconductor layer 20, and a low-refractive-index layer 60. The first semiconductor layer forms a light extraction surface and contains nitride semiconductor crystals. The light-emitting layer is provided on the first semiconductor layer and includes an active layer. The second semiconductor layer is provided on the light-emitting layer. The low-refractive-index layer has a refractive index lower than a refractive index of the first semiconductor layer, partially covers the light extraction surface, and contains crystals formed of a nitride containing Al. An Al content of the first semiconductor layer is less than an Al content of the low-refractive-index layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
