| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can obtain high light emission efficiency in a wide current density range, and to provide a wafer. <P>SOLUTION: A semiconductor light-emitting element includes: an n-type semiconductor layer including a nitride semiconductor whose c plane is a principal plane; a p-type semiconductor layer including a nitride semiconductor; and a light-emitting part provided between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting part includes: a plurality of well layers that contain In<SB POS="POST">x1</SB>Ga<SB POS="POST">1-x1</SB>N (0<x1<1); and barrier layers that are provided between the adjacent plurality of well layers and contain GaN. The thickness of a p-side well layer nearest the p-type semiconductor layer is 4 nm or more and the thicknesses of all the well layers except for the p-side well layer are less than 4 nm. The In composition ratio of the p-side well layer is less than 0.145 and the In composition ratios of all the well layers except for the p-side well layer are 0.145 or more. The thickness of each barrier layer is twice or less the thickness of the p-side well layer. The light emitted from the light-emitting part has a single peak. <P>COPYRIGHT: (C)2013,JPO&INPIT |
