发明名称 SINGLE CRYSTAL PRODUCTION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a single crystal production apparatus capable of improving detection accuracy of a contact of a seed crystal to a melt when growing a single crystal. <P>SOLUTION: The single crystal production apparatus 1 is equipped with: a crystal-growing furnace 4 containing the seed crystal 3 for growing the single crystal on a seed crystal 3 substrate from the raw material melt 2; a seed shaft 5 holding the seed crystal 3 at its lower end; a crucible 7 housing the raw material melt 2; and an energy-releasing body 8 disposed outside the crystal-growing furnace 4 so as to surround the crystal-growing furnace 4. The apparatus 1 is equipped with: a power supply circuit 9 for applying voltage between the crucible 7 and the seed shaft 5; a measurement circuit 11 for measuring the electric current flowing through the power supply circuit 9; and a constant voltage circuit 9B and a cutoff circuit 9C in the power supply circuit 9. The cutoff circuit 9C cuts the electric current when a measured value of the electric current exceeds a set value, provided that the set value is lower than the electric current that flows when the seed crystal contacts the surface of the melt. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012240854(A) 申请公布日期 2012.12.10
申请号 JP20110109388 申请日期 2011.05.16
申请人 TOYOTA MOTOR CORP 发明人 HAMAMOTO KENICHI;TANNO KATSUNORI
分类号 C30B19/10;C30B29/36 主分类号 C30B19/10
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