| 摘要 |
<P>PROBLEM TO BE SOLVED: To expose a target efficiently by a maskless exposure system using a charged particle beam while suppressing increase in the size of an exposure device. <P>SOLUTION: The electron beam exposure device EX comprises a BAA member 14 having a plurality of apertures 15 through which an electron beam EB is irradiated, a modulation unit 13 which controls on/off of the electron beam EB, a fixed aperture member 22 having a plurality of sub-fields 23A, 24A in which a plurality of apertures 25 are formed, respectively, in the arrangement corresponding to that of the apertures 15, a main deflection system 20 deflecting an electron beam that is turned on by the modulation unit 13 to one sub-field, and a wafer stage WST which moves a wafer W in the Y direction for the image of a sub-field selected. <P>COPYRIGHT: (C)2013,JPO&INPIT |
