| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the off-leak current between a source electrode and a drain electrode. <P>SOLUTION: A semiconductor device includes a thin film transistor. The thin film transistor comprises: a gate electrode 101; a gate insulation film 102 formed covering the gate electrode; a semiconductor layer 104 formed on the gate insulation film and positioned above the gate electrode; a second insulation film 108a formed on the semiconductor layer; a first insulation film 108b formed on a top surface and a side surface of the second insulation film, on a side surface of the semiconductor layer, and on the gate insulation film; silicon layers 105 and 106 formed on the first insulation film and electrically connected to the semiconductor layer; and a source electrode 107a and a drain electrode 107b formed on the silicon layers. The source electrode and the drain electrode are electrically separated from each other on the first insulation film. The semiconductor layer is in contact with neither the source electrode nor the drain electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
