| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulated-gate-type semiconductor device having a high load short-circuit withstand capability. <P>SOLUTION: A semiconductor device comprises: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; a third semiconductor layer having the first conductivity type; a fourth semiconductor layer having the second conductivity type; a plurality of first trenches; a first gate insulating film; a first gate electrode; a corrector electrode; and an emitter electrode. The third semiconductor layer has a first region formed to be relatively shallow and a second region formed to be relatively deep. The first region is formed so as to be adjacent to the plurality of first trenches and the second region is formed so as to be spaced apart from the plurality of first trenches through the first region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
