| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for which wiring in a memory cell of an SRAM is surely formed and an electric connection is excellently performed. <P>SOLUTION: In the memory cell of the SRAM in the semiconductor device, a via VS1 to be electrically connected to a third wiring M32 as a word line is directly connected to a contact plug CPS1 electrically connected to a gate wiring part GHA1 of an access transistor T1. Also, a via VS2 to be electrically connected to the third wiring M32 as the word line is directly connected to a contact plug CPS2 electrically connected to a gate wiring part GHA2 of an access transistor T2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
