| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SiC single crystal in which basal plane dislocations are highly oriented, and to provide an SiC wafer and a semiconductor device, that are produced from such an SiC single crystal. <P>SOLUTION: The SiC single crystal has one or more orientation regions where linearity of basal plane dislocations is high, and the basal plane dislocations are oriented in the three crystallographically equivalent <11-20> directions. The SiC wafer and the semiconductor device are manufactured from such an SiC single crystal. This SiC single crystal can be manufactured by using a seed crystal that has a small offset angle on the ä0001} plane highest portion side and a large offset angle on the offset direction downstream side, and by growing a new crystal on the seed crystal. <P>COPYRIGHT: (C)2013,JPO&INPIT |
