| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a photoelectric conversion device having satisfactory electrical connection characteristics between a transparent conductive film and a photoelectric conversion layer, and having excellent photoelectric conversion efficiency. <P>SOLUTION: The photoelectric conversion device includes: a transparent conductive film 2 composed mainly of zinc oxide; a photoelectric conversion layer 4 which has a p type semiconductor layer 4a, an i type semiconductor layer 4b and an n type semiconductor layer 4c sequentially laminated from the side of the transparent conductive film 2, and performs photoelectric conversion; and a back electrode layer 6 made of a conductive film. The transparent conductive film 2, the photoelectric conversion layer 4 and the back electrode layer 6 are disposed in this order on a light transmissive insulating substrate 1. A potential control layer 3 having higher potential energy to sense electrons than a transparent electrode layer 2 is disposed between the transparent conductive film 2 and the p type semiconductor layer 4a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
