| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile storage device in which a selective gate electrode is positioned adjacent to a floating gate electrode and which increases a ratio of a capacity between a control gate electrode and the floating gate electrode to a capacity between the floating gate electrode and a semiconductor substrate. <P>SOLUTION: In a planar view, an end portion of a control gate electrode 130 on the side of a selective gate electrode 170 is an extension portion 133 positioned outside a floating gate electrode 120. A lower end of the extension portion 133 is positioned closer to a semiconductor substrate 100 than an upper surface of the floating gate electrode 120. A first insulating film 132 is formed between the extension portion 133 and the floating gate electrode 120. <P>COPYRIGHT: (C)2013,JPO&INPIT |
