| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element with a gate resistance of several kΩ to several decades kΩ depending on a thin film resistance or substrate resistance, the size of which is larger than the length and width of a substrate. <P>SOLUTION: The structure of a semiconductor element includes: a semiconductor substrate 11 having an active layer 10; a source electrode 13 and a drain electrode 14 that performs ohmic-contact with the active layer 10 of the semiconductor substrate; a gate electrode 15 formed above the active layer 10; an inactive region 16 formed over the semiconductor substrate 11; a conductor 17 in which a part of the gate electrode 15 extends over the inactive region 16 being in contact therewith; a pad electrode 18 located above the inactive region 16, to which a DC voltage is applied; and a gate resistance area 19 formed on the inactive region 16, which comes into ohmic-contact with the pad electrode 18 and the conductor 17. The gate resistance area 19 is formed by injecting boron ion into the semiconductor substrate 11. The sheet resistance value on the gate resistance area 19 is increased by the injecting of boron ion. <P>COPYRIGHT: (C)2013,JPO&INPIT |
