| 摘要 |
PURPOSE: A light emitting device is provided to effectively prevent that an electron having big high mobility is transferred to a second conductive semiconductor layer by forming an electron blocking layer of a plurality of layers consisting of a quantum barrier layers and a quantum-well layer. CONSTITUTION: A stress alleviation layer is formed on a first conductivity semiconductor layer. An electron blocking layer is formed on the stress alleviation layer. The electron blocking layer is comprised of the combination of InAlGaN / InGaN of 5-20pairs. The each electron blocking layer is comprised of InAlGaN layers(241a-245a) as a quantum barrier layers, and InGaN layers(241b-245b) as a quantum-well layer. A second conductive semiconductor layer is formed on the electron blocking layer. [Reference numerals] (AA) N type semicondutor layer; (BB) Stress reducing layer; (CC) Activating layer; (DD) Electron blocking layer; (EE) P type semiconductor layer |
