| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that suppresses the degradation and destruction of a semiconductor layer, a nitride semiconductor wafer, and a method of manufacturing a nitride semiconductor layer. <P>SOLUTION: A semiconductor light-emitting element includes a first semiconductor layer, a light-emitting part, a second semiconductor layer, and an In-containing intermediate layer. The first semiconductor layer is formed above a silicon substrate via a substrate layer, contains a nitride semiconductor, and has a first conductivity type. The light-emitting part is provided above the first semiconductor layer and includes a plurality of barrier layers and well layers that are provided between the adjacent plurality of barrier layers and contain Ga<SB POS="POST">1-z1</SB>In<SB POS="POST">z1</SB>N. The second semiconductor layer is provided on the light-emitting part, contains a nitride semiconductor, and has a second conductivity type. The In-containing intermediate layer is provided at least either between the first semiconductor layer and the light-emitting part or between the second semiconductor layer and the light-emitting part, contains a nitride semiconductor containing In having a different composition ratio from the z1, and has a thickness of 10 nm or more and 1000 nm or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
