| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor element, a manufacturing method for the same, a display device including the same, and a manufacturing method for a display device including the same. <P>SOLUTION: An oxide semiconductor element includes: a gate electrode disposed on a substrate; a gate insulation layer including a recess structure; a source electrode disposed on one side of the gate insulation layer; a drain electrode disposed on the other side of the gate insulation layer; and an active pattern disposed on the gate insulation layer, the source electrode, and the drain electrode. The recess structure can be disposed above the gate electrode and the active pattern can be disposed so as to fill the recess structure. Since the oxide semiconductor element has the gate insulation layer having the recess structure, various electric characteristics such as charge mobility, threshold voltage distribution, and operation current can be improved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
