发明名称 SEMICONDUCTOR TEST DEVICE AND SEMICONDUCTOR TEST METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor test device and a semiconductor test method that correct a test standard by taking the effect of voltage drop into consideration in order to solve a problem of determining a semiconductor device of a good quality in reality as defective and degrading the yield, which may be caused when the power supply voltage of the semiconductor device drops as many internal circuits are simultaneously operated. <P>SOLUTION: A semiconductor device comprises: a first probe that can measure a first voltage at a first measurement point on a test target semiconductor device; a second probe that can measure a second voltage at a second measurement point that is different from the first measurement point; and a control part that corrects a test standard voltage on the basis of the first and second voltages when the semiconductor device is not operated by the predetermined test standard voltage. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012242129(A) 申请公布日期 2012.12.10
申请号 JP20110109639 申请日期 2011.05.16
申请人 RENESAS ELECTRONICS CORP 发明人 NAKAGAWA MASARU
分类号 G01R31/28;H01L21/66 主分类号 G01R31/28
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