发明名称 Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process
摘要 PURPOSE: Thermoelectric materials, a method for improving thermoelectric efficiency thereof, and a supporting body including the same are provided to improve crystallization of the thermoelectric material including bismuth telluride by performing heat treatment using a sealing container which is completely sealed up. CONSTITUTION: Thermoelectric materials including bismuth telluride is prepared. The thermoelectric materials are a nanowire structure or a bulk type structure. The thermoelectric materials including the bismuth telluride is accepted in a sealing container filled with inert gas. The sealed container for accepting the thermoelectric materials is sealed up through alumina paste. The sealed container is filled with tellurium powder and heat treatment is performed. [Reference numerals] (AA) Manufacturing porous(Al2O3) supporter; (BB) Anodizing method; (CC) Synthesizing Bi2Te3 nanorwire; (DD) Pulse electroplating method; (EE) Opening a sealing container; (FF) Filling Bi2Te3 nanowire + Te powder; (GG) Sealing a sealing container with Al paste; (HH) Glove Box; (II) Quartz Chamber; (JJ) Thermal process execution; (KK) 573K-673K
申请公布号 KR20120133009(A) 申请公布日期 2012.12.10
申请号 KR20110051461 申请日期 2011.05.30
申请人 发明人
分类号 H01L35/14;H01L35/16;H01L35/18;H01L35/28 主分类号 H01L35/14
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