发明名称 METHOD FOR REAR POINT CONTACT FABRICATION FOR SOLAR CELLS
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming holes in a backside dielectric layer of solar cells for fabrication of rear point contact. <P>SOLUTION: The backside of a dielectric layer 105, 110 is coated with a carbon layer 120. A shadow mask 125 is placed over the carbon layer 120 and reactive ion etch (RIE) is used to transfer holes 130 in the shadow mask 125 to the carbon layer 120, to thereby form a carbon mask. The shadow mask 125 is then removed and RIE is used to transfer holes 140 from the carbon mask to the dielectric layer 105, 110. The carbon mask is then removed by, e.g., ashing. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012244179(A) 申请公布日期 2012.12.10
申请号 JP20120113876 申请日期 2012.05.17
申请人 INTEVAC INC 发明人 CHOU YONG-GYU;JUDY HUANG
分类号 H01L31/04 主分类号 H01L31/04
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