| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an image with high quality, to reduce deterioration of signal quality, and to suppress an increase of a chip area. <P>SOLUTION: The solid-state imaging apparatus includes: a first electrode pad arranged on a first substrate where a plurality of photoelectric conversion elements included in a pixel are installed; a second electrode pad disposed on a second substrate having a reading section reading a signal of the pixel; and a connection section which electrically connects the first electrode pad and the second electrode pad by bonding one end to the first electrode pad and the other end to the second electrode pad. The plurality of pixels are divided into a plurality of regions at every unit pixel cell or at every cell obtained by collecting the plurality of pixels. First to n-th first electrode pads and first to m-th second electrode pads are allocated to the respective divided regions. The first to n-th first electrode pads and the first to m-th second electrode pads which are allocated to the same divided region are electrically connected through the plurality of connection sections. <P>COPYRIGHT: (C)2013,JPO&INPIT |
