| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a press contact type semiconductor device capable of suppressing contamination and warp of a semiconductor element. <P>SOLUTION: A press contact type semiconductor device 1 is formed by pressurizing and holding, by a pair of electrode plates 3 and 3, a semiconductor element 2 including a semiconductor substrate 4, a first emitter electrode layer 51 and a second emitter electrode layer 52 laminated on a front surface side of the semiconductor substrate 4, and a first collector electrode layer 61 and a second collector electrode layer 62 laminated on a back surface side of the semiconductor substrate 4. The first emitter electrode layer 51 and the second emitter electrode layer 52 are formed respectively into a prescribed pattern shape, the first collector electrode layer 61 covers the entire back surface of the semiconductor substrate 4, and an outer peripheral end part 62a of the second collector electrode layer 62 roughly matches with an outer peripheral end part 52a of the second emitter electrode layer 52 in a projection view in a pressurizing direction T by the pair of electrode plates 3 and 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
