| 摘要 |
A method of manufacturing a semiconductor device includes forming an oxidation film over a first and a second device region, forming an first etching preventing film extending over a first and a second area, removing the first etching preventing film over the first area; removing the oxidation film over the first device region, forming a first gate insulating film over the first device region, removing the oxidation film over the second device region, forming a second gate insulating film over the second device region, forming a first gate electrode over the first gate insulating film, forming a second gate electrode over the second gate insulating film, forming first source and drain regions in the first device region at both sides of the first gate electrode, and forming second source and drain regions in the second device region at both sides of the second gate electrode. |
