| 摘要 |
A film-forming method and a substrate processing apparatus are provided, which are capable of improving productivity of an epitaxial film of GaN by increasing the number of substrates to be processed at one time. The substrate processing apparatus for processing a substrate including an epitaxial film includes: a processing chamber configured to process the substrate, a gas supply unit configured supply a source gas for forming the epitaxial film and a cleaning gas into the processing chamber, and a control unit configured to control at least an inside temperature and an inside pressure of the processing chamber, wherein the control unit controls the gas supply unit to supply the cleaning gas into the processing chamber when the inside temperature and the inside pressure of the processing chamber reach a predetermined temperature and a predetermined pressure, respectively. |
