GAS DISTRIBUTION SHOWERHEAD FOR INDUCTIVELY COUPLED PLASMA ETCH REACTOR

摘要

This invention discloses a ceramic showerhead for an inductively coupled plasma processing apparatus which includes a processing chamber in which a semiconductor substrate is processed, a substrate support on which the semiconductor substrate is supported during processing thereof, and an antenna operable to generate and maintain a plasma in the processing chamber. The ceramic showerhead forms a dielectric window of the chamber and a gas delivery system is operable to alternately supply an etching gas and a deposition gas to a plenum in the showerhead and replace the etching gas in the plenum with the deposition gas within 200 milliseconds