METHOD FOR MANUFACTURING FIN FIELD-EFFECT TRANSISTOR

摘要

Provided is a method for manufacturing a fin field-effect transistor, comprising: providing a substrate; forming a fin in the substrate, forming a pseudo gate strip crossing the fin, forming a source drain window in a coverage layer on two sides of the pseudo gate strip and in a first dielectric layer, the source drain window being on the two sides of the fin covered by the pseudo gate strip and being surrounded by the surrounding coverage layer and first dielectric layer. When a source drain area is formed in the source drain window, stress is incurred because the lattice does not match, the stress is limited by the first dielectric layer so as to be applied within a channel, thereby increasing the mobility of a device and improving the performance of the device.