发明名称 |
Beam-Induced Deposition of Low-Resistivity Material |
摘要 |
An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μ&OHgr;·cm. |
申请公布号 |
US2012308740(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213351088 |
申请日期 |
2012.01.16 |
申请人 |
RANDOLPH STEVEN;CHANDLER CLIVE D.;FEI COMPANY |
发明人 |
RANDOLPH STEVEN;CHANDLER CLIVE D. |
分类号 |
C23C16/50 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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