发明名称 |
PLASMA ETCHING METHOD AND STORAGE MEDIUM |
摘要 |
A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas. |
申请公布号 |
US2012309203(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213584327 |
申请日期 |
2012.08.13 |
申请人 |
HOSHI NAOTSUGU;KOBAYASHI NORIYUKI;TOKYO ELECTRON LIMITED |
发明人 |
HOSHI NAOTSUGU;KOBAYASHI NORIYUKI |
分类号 |
H01L21/3065;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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