发明名称 |
LATERAL TRENCH MESFET |
摘要 |
A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first semiconductor material. The second semiconductor material has a different band gap than the first semiconductor material. The transistor also includes a gate material disposed in the trench and spaced apart from the first semiconductor material by the second semiconductor material. The gate material provides a gate of the transistor. Source and drain regions are arranged in the trench with a channel interposed between the source and drain regions in the first or second semiconductor material so that the channel has a lateral current flow direction along the sidewalls of the trench. |
申请公布号 |
US2012305932(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113172022 |
申请日期 |
2011.06.29 |
申请人 |
HIRLER FRANZ;MEISER ANDREAS PETER;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;MEISER ANDREAS PETER |
分类号 |
H01L29/205;H01L21/338;H01L29/812 |
主分类号 |
H01L29/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|