HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a heat treatment apparatus and a heat treatment method which can calculate a surface temperature of a substrate regardless of a device pattern formed on the surface.

SOLUTION: A heat treatment apparatus measures a rear face temperature of a semiconductor wafer having known emissivity after a period of time from time ta at which flash light irradiation is started to time tc at which a surface temperature and the rear face temperature of the semiconductor wafer become identical with each other. The heat treatment apparatus calculates emissivity of the surface of the semiconductor wafer based on an intensity of radiation light emitted from a black body isothermal with the measured rear face temperature and an intensity of radiation light actually emitted from the surface of the semiconductor wafer. Subsequently, the heat treatment apparatus calculates the temperature of the surface of the semiconductor wafer heated by the flash light irradiation based on the calculated emissivity and the intensity of radiation light emitted from the surface of the semiconductor wafer measured after the start of the flash light irradiation.

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