METHOD FOR CLEANING WAFER AFTER CHEMICAL-MECHANICAL PLANARIZATION

摘要

Provided is a method for cleaning wafer after chemical-mechanical planarization (CMP), comprising: placing a wafer on a wafer clamping mechanism and actuating a wafer rotation mechanism to cause the wafer clamping mechanism and the wafer to rotate together; performing chemical cleaning for the first time, and supplying chemical cleaning liquid on a wafer surface via a cleaning liquid supply suspension beam, wherein the cleaning liquid supply suspension beam is spaced a specific distance from the wafer surface; performing deionized water cleaning for the first time, supplying deionized water on the wafer surface via the cleaning liquid supply suspension beam, cleaning away the chemical cleaning liquid and cleaning residues; performing process cleaning for the second time to further consolidate the cleaning effect; and drying the wafer. According to the method for cleaning wafer of the present invention, since a non-contact suspension beam is used to supply the cleaning liquid and the deionized water for cleaning the wafer surface, the scratches on the wafer surface possibly caused in the process of contact brushing and cleaning are decreased or eliminated, and the yield rate of a wafer device is improved.