发明名称 MRAM FIELD DISTURB DETECTION AND RECOVERY
摘要 <p>A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.</p>
申请公布号 WO2012166910(A1) 申请公布日期 2012.12.06
申请号 WO2012US40196 申请日期 2012.05.31
申请人 EVERSPIN TECHNOLOGIES, INC.;ANDRE, THOMAS;ALAM, SYED M.;ENGEL, BRADLEY;BUTCHER, BRIAN 发明人 ANDRE, THOMAS;ALAM, SYED M.;ENGEL, BRADLEY;BUTCHER, BRIAN
分类号 G06F11/00 主分类号 G06F11/00
代理机构 代理人
主权项
地址