| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of reading operations and an area of a circuit related to a control of a reading operation in a nonvolatile memory device for sensing multi-level data using a resistance change. <P>SOLUTION: The nonvolatile memory device includes: a cell array including one or more unit cells and reading or writing data; and a sensing unit 100 that compares a sensing voltage SAI corresponding to data stored in a unit cell with a reference voltage REF, and amplifies and outputs it, then measures a difference in time when the sensing voltage is discharged according to a resistance value of the unit cell, in an activation zone of a sensing enable signal SEN after a bit line is precharged, thereby sensing the data. <P>COPYRIGHT: (C)2013,JPO&INPIT |
