| 摘要 |
A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a directionαin which an angleβformed with respect to a <11-20> direction or a <1-100> direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane.
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