发明名称 |
CONDUCTIVE STRUCTURE FOR A SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME |
摘要 |
A conductive structure for a semiconductor integrated circuit and method for forming the conductive structure are provided. The semiconductor integrated circuit has a pad and a passivation layer partially covering the pad to define a first opening portion having a first lateral size. The conductive structure electrically connects to the pad via the first opening portion. The conductive structure comprises a support layer defining a second opening portion. A conductor is formed in the second opening portion to serve as a bump having a planar top surface. |
申请公布号 |
US2012309186(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213568465 |
申请日期 |
2012.08.07 |
申请人 |
CHYI J. B.;HUANG CHENG TANG |
发明人 |
CHYI J. B.;HUANG CHENG TANG |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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