SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A drift layer (3) has a thickness direction in which a current passes through, and concentration (N1d) of a first conductivity type impurity. A body region (4) is provided on a part of the drift layer (3), has a channel (41) that is switched by means of a gate electrode (93), and has concentration (N1b) of first conductivity type impurity, and concentration (N2b) of a second conductivity type impurity, said concentration (N2b) being higher than the concentration (N1b). A JFET region (7) is adjacent to the body region (4), said JFET region being on the drift layer (3), and has concentration (N1j) of a first conductivity type impurity, and concentration (N2j) of a second conductivity type impurity, said concentration (N2j) being lower than the impurity concentration (N1j). The inequalities of N1j-N2j>N1d and N2j2b are satisfied.