发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the possibility of an erroneous write operation in a semiconductor storage device adopting a phase-change memory which stores information by utilizing the Joule heat. <P>SOLUTION: A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than the semiconductor layer to which the first current has been applied. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012238348(A) |
申请公布日期 |
2012.12.06 |
申请号 |
JP20110105113 |
申请日期 |
2011.05.10 |
申请人 |
HITACHI LTD |
发明人 |
HANZAWA SATORU;MINEMURA HIROYUKI |
分类号 |
G11C13/00;H01L27/10;H01L27/105;H01L45/00 |
主分类号 |
G11C13/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|