发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To suppress the possibility of an erroneous write operation in a semiconductor storage device adopting a phase-change memory which stores information by utilizing the Joule heat. <P>SOLUTION: A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than the semiconductor layer to which the first current has been applied. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012238348(A) 申请公布日期 2012.12.06
申请号 JP20110105113 申请日期 2011.05.10
申请人 HITACHI LTD 发明人 HANZAWA SATORU;MINEMURA HIROYUKI
分类号 G11C13/00;H01L27/10;H01L27/105;H01L45/00 主分类号 G11C13/00
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