| 发明名称 |
METHODS OF FORMING SEMICONDUCTOR STRUCTURES |
| 摘要 |
A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.
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| 申请公布号 |
US2012309197(A1) |
申请公布日期 |
2012.12.06 |
| 申请号 |
US201113151806 |
申请日期 |
2011.06.02 |
| 申请人 |
CHOU HSING-FEI;CHU CHIA-HUA;CHEN JIEH-JANG;SHIU FENG-JIA;HSIEH HUNG CHANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHOU HSING-FEI;CHU CHIA-HUA;CHEN JIEH-JANG;SHIU FENG-JIA;HSIEH HUNG CHANG |
| 分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
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