发明名称 |
Electrical Chemical Plating Process |
摘要 |
An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure. |
申请公布号 |
US2012305403(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113154420 |
申请日期 |
2011.06.06 |
申请人 |
LIN CHUN-LING;LU YEN-LIANG;HSU CHI-MAO;LIN CHIN-FU;CHEN CHUN-HUNG;CHENG TSUN-MIN;TSAI MENG-HONG |
发明人 |
LIN CHUN-LING;LU YEN-LIANG;HSU CHI-MAO;LIN CHIN-FU;CHEN CHUN-HUNG;CHENG TSUN-MIN;TSAI MENG-HONG |
分类号 |
C25D7/12;C25D5/00 |
主分类号 |
C25D7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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