发明名称 APPARATUS AND PROCESS FOR ATOMIC LAYER DEPOSITION
摘要 Provided are atomic layer deposition apparatus and methods including a gas distribution plate with a thermal element. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate by temporarily raising or lowering the temperature.
申请公布号 WO2012118947(A3) 申请公布日期 2012.12.06
申请号 WO2012US27240 申请日期 2012.03.01
申请人 APPLIED MATERIALS, INC.;YUDOVSKY, JOSEPH 发明人 YUDOVSKY, JOSEPH
分类号 C23C16/44;C23C16/455;H01L21/205 主分类号 C23C16/44
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