发明名称 |
METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An object of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus. |
申请公布号 |
US2012304932(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213550776 |
申请日期 |
2012.07.17 |
申请人 |
TORIUMI SATOSHI;TAJIMA RYOTA;OHTSUKI TAKASHI;TANAKA TETSUHIRO;TOKUMARU RYO;ICHIJO MITSUHIRO;KURIKI KAZUTAKA;YOKOI TOMOKAZU;ENDO TOSHIYA;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TORIUMI SATOSHI;TAJIMA RYOTA;OHTSUKI TAKASHI;TANAKA TETSUHIRO;TOKUMARU RYO;ICHIJO MITSUHIRO;KURIKI KAZUTAKA;YOKOI TOMOKAZU;ENDO TOSHIYA;YAMAZAKI SHUNPEI |
分类号 |
C23C16/448 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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