| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the reliability of a semiconductor device including an oxide semiconductor by giving stable electric characteristics to the semiconductor device. <P>SOLUTION: A semiconductor device comprises a multilayer structure including: a gate insulation layer; a first gate electrode in contact with one plane of the gate insulation layer; an oxide semiconductor layer in contact with the other plane of the gate insulation layer and provided in a region overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulation layer which are in contact with the oxide semiconductor layer. The nitrogen concentration of the oxide semiconductor layer is 2×10<SP POS="POST">19</SP>atoms/cm<SP POS="POST">3</SP>or less, and the source electrode and the drain electrode are each formed using one element or a plurality of elements selected from tungsten, platinum, and molybdenum. <P>COPYRIGHT: (C)2013,JPO&INPIT |
