| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress variation in gate projection length in a semiconductor device with a trench gate structure. <P>SOLUTION: In a method of manufacturing a semiconductor device 100, a step of forming a trench 3 is performed in a predetermined position of a semiconductor substrate 10, and an adjustment layer 8, to which an impurity of a first conductivity type is introduced at a concentration higher than that of a drift layer 2, is formed on a bottom wall 3b of the trench 3. By introducing an impurity of a second conductivity type between a first main surface 10a and the adjustment layer 8 on the side wall 3a of the trench 3, a channel layer 4a is formed such that extension in a depth direction is suppressed by the adjustment layer 8. <P>COPYRIGHT: (C)2013,JPO&INPIT |
