发明名称 SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE
摘要 A semiconductor device is manufactured by forming a first dielectric film on a substrate, forming an aperture in the first dielectric film, mounting a semiconductor chip in the aperture, forming a second dielectric film on the first dielectric film and the semiconductor chip, and forming an interconnection wiring structure on the second dielectric film. The second dielectric film secures the semiconductor chip without the need to etch the substrate or use an adhesive die attachment film.
申请公布号 US2012306068(A1) 申请公布日期 2012.12.06
申请号 US201213482847 申请日期 2012.05.29
申请人 LAPIS SEMICONDUCTOR CO., LTD. 发明人 SAITO HIROKAZU
分类号 H01L23/48;H01L21/50 主分类号 H01L23/48
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