发明名称 |
METHOD FOR FABRICATING A DRAM CAPACITOR |
摘要 |
A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal. A dielectric layer is formed over the first electrode. The dielectric layer is subjected to a milliseconds anneal process that serves to crystallize the dielectric material and decrease the concentration of oxygen vacancies.
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申请公布号 |
US2012309160(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113153626 |
申请日期 |
2011.06.06 |
申请人 |
RAMINI KARTHIK;ODE HIROYUKI;MALHOTRA SANDRA;ELPIDA MEMORY, INC.;INTERMOLECULAR, INC. |
发明人 |
RAMINI KARTHIK;ODE HIROYUKI;MALHOTRA SANDRA |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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