SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING THE SAME, AND PACKAGE COMPRISING THE SAME

摘要

A semiconductor light-emitting device, which has excellent light emission efficiency in the lateral direction and facilitates substrate cutting, a method of fabricating the semiconductor light-emitting device, and a semiconductor light-emitting device including the semiconductor light-emitting device. The semiconductor light-emitting device includes a sapphire substrate and a nitride structure stacked on the upper surface of the substrate. The nitride structure has a plurality of nitride epitaxial layers including an active layer that generates light. A respective horizontal cross-section of the substrate and the nitride structure has a rhombic shape having two acute angles and two obtuse angles. The substrate has at least one refined area on at least one side surface thereof, the refined area having a band-like shape extending in a horizontal direction.